Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-12-11
2007-12-11
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
Reexamination Certificate
active
11296057
ABSTRACT:
A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire. A system for fabricating the semiconductor component includes a bonding capillary configured to place the wire in the via, and to form a bonded connection between the wire and the substrate contact.
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Ivy Wei Qin et al., “Automatic Wedge Bonding with Ribbon Wire For High Frequency Applications”, Semicon West, 2002 SEMI, pp. 1-11.
U.S. Appl. No. 11/102,408 filed Apr. 8, 2005, David R. Hembree, entitled “Method and System for Fabricating Semiconductor Components with Through Wire Interconnects”.
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Hembree David R.
Wood Alan G.
Gratton Stephen A.
Micro)n Technology, Inc.
Potter Roy
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