One mask high density capacitor for integrated circuits

Details One mask high density capacitor for integrated circuits One mask high density capacitor for integrated circuits

2007-11-06

2007-11-06

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S532000

Reexamination Certificate

active

10696816

ABSTRACT:
An on-chip decoupling capacitor (106) and method of fabrication. The decoupling capacitor (104) is integrated at the top metal interconnect level (104) and may be implemented with only one additional masking layer. The decoupling capacitor (106) is formed on a copper interconnect line (104a). An aluminum cap layer (118) provides electrical connection to the top electrode (112) of the decoupling capacitor (106).

REFERENCES:
patent: 4937649 (1990-06-01), Shiba et al.
patent: 5161729 (1992-11-01), Dunaway et al.
patent: 5656834 (1997-08-01), Grzyb et al.
patent: 6399974 (2002-06-01), Ohtsuki
patent: 6573150 (2003-06-01), Urdahl et al.
patent: 6680521 (2004-01-01), Kar-Roy et al.
patent: 6706584 (2004-03-01), List et al.
patent: 6750113 (2004-06-01), Armacost et al.
patent: 6841819 (2005-01-01), Saito et al.

Affiliated with

Also associated with

Rating

One mask high density capacitor for integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with One mask high density capacitor for integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and One mask high density capacitor for integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3841360