Method of characterizing flare

Optics: measuring and testing – Inspection of flaws or impurities – Surface condition

Reexamination Certificate

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Reexamination Certificate

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10860853

ABSTRACT:
A method of measuring flare in an optical lithographic system utilizes an exposure mask with first and second discrete opaque features each having rotational symmetry of order greater than four and of different respective areas. The exposure mask is positioned in the lithographic system such that actinic radiation emitted by the lithographic system illuminates the sensitive surface of an exposure target through the exposure mask. The extent to which regions of the sensitive surface that are within the geometric image of a feature of the exposure mask are exposed to actinic radiation during due to flare is measured.

REFERENCES:
patent: 2004/0196447 (2004-10-01), Watanabe
Flagello, Donis G.; Socha, Robert; Shi, Zuelong; van Schoot, Jan; Baselmans, Jan, van Kerkhof, Mark; de Boeij, Wim; Engelen, Andre; Carpaij, Rene; Noordman, Oscar; Moers, Marco; Mulder, Melchoir; Finders, Jo; van Greevenbroek, Henk; Schriever, Martin; Maul, Manfred; Haidner, Helmut; Goeppert, Markus; Wegmann, Ulrich; Graeupner, Paul, “Optimizing and Enhancing Optical Systems to Meet the Los k1Challenge,” Optical Microlithography XVI, Proceedings of SPIE vol. 5040 (2003) pp. 139-150.
Otsuka, Takahisa; Sakamoto, Kazuo, “CD Error Budget Analysis in ArF Lithography,” Data Analysis and Modeling for Process Control, Proceedings of SPIE vol. 5378 (2004) pp. 160-171.
Futatsuya, Hiroki; Yao, Teruyoshi; Osawa, Morimi; Ogino, Kozo; Hoshino, Hiromi; Arimoto, Hiroshi; Machida, Yasuhide and Asai, Satoru, “Model-Based OPC/DRC Considering Local Flare Effects,” Optical Microlithography XVII, Proceedings of SPIE Vo. 5377 (2004) pp. 451-458.
Emmanuelle Luce, Blandine Minghetti, Patrick Schiavone, Olivier Toublan and Andre P. Weill, “Flare Impact on the Intrafield CD Control for Sub-0.25-μm Patterning,” Proc. SPIE vol. 3679,Optical Microlithography XII, Jul. 1999, p. 368-381.
G. Golub and van Loan,Matrix Computations, Chapter 2, John Hopkins University Press, 1996.
M. Griddata, “MATLAB Function Reference,” The Math Works, Inc., Natick, Massachusetts, 2002.
Chan et al, “High-Resolution Maskless Lithography,”Journal of Microlithography, Microfabrication and Microsystems 02(04), 2003, p. 331-339.
Kirk, Joseph P., “Scattered Light in Photolithographic Lenses,” Proceedings of SPIE vol. 2197 (1994) pp. 566-572.
Renwick, Stephen P., “Flare and its Effects on Imaging,” Nikon Precision, Inc., Belmont, California, Proceedings of SPIE vol. 5377 (2004) pp. 442-450.
van de Kerkhof, Mark; de Boeij, Wim; Kok, Haico; Silova, Marianna; Baselmans, Jan; Hemerik, Marcel, “Full Optical Column Characterization of DUV Lithographic Projection Tools,” Proceedings of SPIE vol. 5377 (2004) pp. 1960-1970.
Flagello, Donis G.; Socha, Robert; Shi, Zuelong; van Schoot, Jan; Baselmans, Jan, van Kerkhof, Mark; de Boeij, Wim; Engelen, Andre; Carpaij, Rene; Noordman, Oscar; Moers, Marco; Mulder, Melchoir; Finders, Jo; van Greevenbroek, Henk; Schriever, Martin; Maul, Manfred; Haidner, Helmut; Goeppert, Markus; Wegmann, Ulrich; Graeupner, Paul, “Optimizing and Enhancing Optical Systems to Meet the Los k1Challenge,” Optical Microlithography XVI, Proceedings of SPIE vol. 5040 (2003) pp. 139-150.
Matsuyama, Tomoyuki; Ishiyama, Toshiro; Ohmura, Yasuhiro, “Nikon Projection Lens Update,” Proceedings of SPIE vol. 5377 (2004) pp. 730-741.
Otsuka, Takahisa; Sakamoto, Kazuo, “CD Error Budget Analysis in ArF Lithography,” Data Analysis and Modeling for Process Control, Proceedings of SPIE vol. 5378 (2004) pp. 160-171.
Futatsuya, Hiroki; Yao, Teruyoshi; Osawa, Morimi; Ogino, Kozo; Hoshino, Hiromi; Arimoto, Hiroshi; Machida, Yasuhide and Asai, Satoru, “Model-Based OPC/DRC Considering Local Flare Effects,” Optical Microlithography XVII, Proceedings of SPIE Vo. 5377 (2004) pp. 451-458.

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