Flash memory programming using an indication bit to...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185110, C365S185180

Reexamination Certificate

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11229664

ABSTRACT:
Non-volatile memory, such as Flash memory, is programmed by writing a window of information to memory. The programmed
on-programmed state of each memory cell may be dynamically determined for each window and stored as an indication bit. These techniques can provide for improved average power drain and a reduced maximum current per window during programming.

REFERENCES:
patent: 5291446 (1994-03-01), Van Buskirk et al.
patent: 5539688 (1996-07-01), Yiu et al.
patent: 5748534 (1998-05-01), Dunlap et al.
patent: 5757711 (1998-05-01), Nakaoka et al.
patent: 5890192 (1999-03-01), Lee et al.
patent: 6295228 (2001-09-01), Pawletko et al.
patent: 6426893 (2002-07-01), Conley et al.
patent: 6515903 (2003-02-01), Le et al.
patent: 6563745 (2003-05-01), Ilkbahar
patent: 6570785 (2003-05-01), Mangan et al.
patent: 6665215 (2003-12-01), Thomas et al.
patent: 6735117 (2004-05-01), Ott
patent: 6906966 (2005-06-01), Shor et al.
patent: 6947347 (2005-09-01), Fujioka
patent: 7057939 (2006-06-01), Li et al.
patent: 7154794 (2006-12-01), Ahne et al.
patent: 2002/0167844 (2002-11-01), Han et al.
patent: 2003/0046481 (2003-03-01), Kushnarenko
patent: 2003/0142544 (2003-07-01), Maayan et al.
patent: 2004/0027857 (2004-02-01), Ooishi
patent: 2004/0037113 (2004-02-01), Ooishi
patent: 2004/0109354 (2004-06-01), Wang et al.
patent: 2007/0035991 (2007-02-01), Chen et al.
2002 IEEE International Solid-State Circuits Conference, Session 6, “SRAM and Non-Volatile Memories”, Feb. 4, 2004, 6 pages.
2002 IEEE International Solid-State Circuits Conference, 29 pages.
Co-pending U.S. Appl. No. 11/212,614, filed Aug. 29, 2005, entitled: “Voltage Regulator with Less Overshoot and Faster Settling Time,” Yonggang Wu et al.; 30 pp.
Co-pending U.S. Appl. No. 11/229,529, filed Sep. 30, 2005, entitled: “Flash Memory Programming with Data Dependent Control of Source Lines,” Guowei Wang et al.; 30 pp.
International Search Report mailed Jan. 31, 2007, for corresponding International Application No. PCT/US2006/034990, filed Sep. 7, 2006, 4 pages.

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