Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-11-20
2007-11-20
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C365S185030, C365S185230, C365S185220
Reexamination Certificate
active
11109325
ABSTRACT:
There is provided a non-volatile memory which enables high accuracy threshold control in a writing operation. In the present invention, a drain voltage and a drain current of a memory transistor are controlled to carry out a writing operation of a hot electron injection system, which is wherein a charge injection speed does not depend on a threshold voltage. FIGS.1A and1B are views of a circuit structure for controlling the writing. In FIGS.1A and1B, an output of an operational amplifier103is connected to a control gate of a memory transistor101, a constant current source102is connected to a drain electrode, and a source electrode is grounded. The constant current source102and a voltage Vpgm are respectively connected to two input terminals of the operational amplifier103.
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Kato Kiyoshi
Koyama Jun
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Nguyen Viet Q.
Semiconductor Energy Laboratory Co,. Ltd.
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