Method for forming isolation layer in semiconductor memory...

Details Method for forming isolation layer in semiconductor memory... Method for forming isolation layer in semiconductor memory...

2007-08-21

2007-08-21

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S435000, C438S756000

Reexamination Certificate

active

11016437

ABSTRACT:
Disclosed herein is a method for forming an isolation film of a semiconductor memory device. According to the disclosure, in a pre-treatment cleaning process performed before a tunnel oxide film is formed, a SC-1 cleaning process is performed at a temperature ranging from 60° C. to 70° C. Therefore, oxide films in a cell region and a peripheral region are recessed even in the SC-1 cleaning process as well as a DHF cleaning process. A DHF cleaning time can be thus reduced. Accordingly, the method can minimize loss of a silicon substrate by DHF and can thus control the depth of a moat.

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An official action in China for Chinese Patent Application No. 200510005778.2 and English translation.

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