Source controlled operation of non-volatile memories

Details Source controlled operation of non-volatile memories Source controlled operation of non-volatile memories

2007-02-06

2007-02-06

Tran, Michael (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

11201000

ABSTRACT:
Non-volatile memory such as flash EEPROM has memory cells that may be programmed in parallel using a self-limiting programming technique. Individual cells have charge storage units that may be charged by hot electrons in a self-limiting manner. As the charge storage unit reaches the required level of charge, hot electrons are no longer generated, or are generated in reduced number. The level of charge at which hot electron generation stops is determined by the voltage applied to the cell. Thus, several cells may be programmed in parallel, each self-limiting at a charge level corresponding to the voltage applied.

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