Method of fabricating a triple heterojunction bipolar transistor

Details Method of fabricating a triple heterojunction bipolar transistor Method of fabricating a triple heterojunction bipolar transistor

1994-06-08

1996-06-04

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437133, 437110, 437126, H01L 21265

Patent

active

055232434

ABSTRACT:
A vertical Triple Heterojunction Bipolar Transistor (THBT) and method of fabrication therefor. The THBT collector has a substrate layer of N.sup.+ silicon, an N.sup.- silicon layer grown on the substrate and a Si/SiGe superlattice grown on the N.sup.- silicon layer. The THBT base is layer of P.sup.+ SiGe grown on the superlattice. The THBT Emitter is a second Si/SiGe Superlattice grown on the base layer. An N.sup.- silicon layer is grown on the emitter superlattice. A layer of N.sup.+ GaP grown on that N.sup.- Si layer. The base is formed, first, by etching a rectangular groove through the emitter, ion implanting dopant into the base layer to form an extrinsic base, etching a V shaped groove into the extrinsic base and, then, filling the grooved base with doped polysilicon.

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