Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-02-06
2007-02-06
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S061000, C257S057000, C345S204000
Reexamination Certificate
active
10843337
ABSTRACT:
A thin film transistor according to the present invention includes a gate electrode, a semiconductor layer having a channel forming region arranged on the gate electrode and an impurity region arranged on a part of the channel forming region, source and drain electrodes electrically connected to the impurity region, and a gate insulating film that electrically insulates the gate electrode and the semiconductor layer, wherein the distance between the upper end of the gate electrode and the upper end of the impurity region is larger than the distance between the upper end of the gate electrode and the upper end of the channel forming region.
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patent: 5656824 (1997-08-01), den Boer et al.
patent: 6350995 (2002-02-01), Sung et al.
patent: 2003/0094616 (2003-05-01), Andry et al.
patent: 8-234683 (1996-09-01), None
patent: 10333641 (1998-12-01), None
Miwa Koichi
Morooka Mitsuo
Ono Shinya
Tsujimura Takatoshi
Chiu Tsz
Kyocera Corporation
Smith Zandra V.
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