Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-11-06
2007-11-06
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000
Reexamination Certificate
active
11193417
ABSTRACT:
In the structure of a semiconductor device of the present invention, a first source electrode is connected to a conductive substrate through a via hole, and a second source electrode is formed. Thus, even if a high reverse voltage is applied between a gate electrode and a drain electrode, electric field concentration likely to occur at an edge of the gate electrode closer to the drain electrode can be effectively dispersed or relaxed. Moreover, the conductive substrate is used as a substrate for forming element formation layers, so that a via hole penetrating the substrate to reach the backside thereof does not have to be formed in the conductive substrate. Thus, with the strength necessary for the conductive substrate maintained, the first source electrode can be electrically connected to a backside electrode.
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Hikita Masahiro
Hirose Yutaka
Tanaka Tsuyoshi
Uemoto Yasuhiro
Ueno Hiroaki
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Prenty Mark V.
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