Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-12-04
2007-12-04
Lebentritt, Michael (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
Reexamination Certificate
active
10540515
ABSTRACT:
A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure which comprises an InGaAs layer as a channel layer9and an InGaP layer containing n-type impurities as a front side electron supplying layer12, wherein an electron mobility in the InGaAs layer at room temperature (300 K) has become 8000 cm2/V·s or more by growing an epitaxial substrate having a pseudomorphic HEMT structure with an In composition of the channel layer9increased. Front side spacer layers10and11between the channel layer9and the front side electron supplying layer12may also be InGaP layers.
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Fukuhara Noboru
Nakano Tsuyoshi
Harrison Monica D.
Lebentritt Michael
Sughrue & Mion, PLLC
Sumika Epi Solution Company, Ltd.
Sumitomo Chemical Company Limited
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