Method of forming an element isolation film of a...

Details Method of forming an element isolation film of a... Method of forming an element isolation film of a...

2007-06-26

2007-06-26

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000

Reexamination Certificate

active

11010755

ABSTRACT:
Disclosed herein is a method of forming an element isolation film of a semiconductor device. An aluminum oxide film of a high wet etch rate is used as a pad oxide film, a trench is formed, and top and bottom edges of the trench is made rounded while removing some of the aluminum oxide film by a cleaning process. It is thus possible to make the top and bottom edges of the trench rounded without using polymer. It is also possible to minimize generation of a moat due to a step between a field region and an active region in a cleaning process before a gate oxide film is formed.

REFERENCES:
patent: 6153480 (2000-11-01), Arghavani et al.
patent: 6214697 (2001-04-01), Moore et al.
patent: 2004-0006322 (2004-01-01), None

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