Method of forming patterned thin film and method of...

Etching a substrate: processes – Forming or treating article containing magnetically...

Reexamination Certificate

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C216S040000, C216S041000, C216S046000, C216S049000, C216S067000, C216S072000, C216S079000, C438S696000, C438S701000, C438S739000, C438S947000

Reexamination Certificate

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10271590

ABSTRACT:
In a method of forming a patterned thin film, first, an etching stopper film and a film to be patterned are formed in this order on a base layer. Next, a patterned first film is formed on the film to be patterned. Next, a second film is formed over an entire surface on top of the film to be patterned and the first film. Then, by removing the first film, an etching mask is obtained from the second film formed on the film to be patterned. The film to be patterned is selectively etched through dry etching using the etching mask. A patterned thin film having a groove is thereby obtained.

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