Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1984-01-25
1985-07-02
Weisstuch, Aaron
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
29572, 357 30, 357 52, 357 72, 357 73, 427 39, 427 74, 427 95, 136258, H01L 3104, H01L 3118
Patent
active
045270074
ABSTRACT:
In a process for producing a photoelectric conversion device having a junction between hydrogenated amorphous silicon and an electrode made of ITO or the like, on the surface of which a passivation film made of silicon oxide is provided, the passivation film being formed by the plasma CVD method in an atmosphere of mixed gas prepared by admixing an excess of oxygen-containing gas, such as nitrous oxide, carbon dioxide, oxygen, or the like, with silane gas. The surface of the photoelectric conversion device is covered with a silicon oxide film formed in accordance with the plasma CVD method at a temperature of less than 300.degree. C. in an atmosphere of mixed gas consisting of silane gas and an excess of oxygen-containing gas.
REFERENCES:
patent: 3990100 (1976-11-01), Mamine et al.
patent: 4379943 (1983-04-01), Yang et al.
patent: 4410558 (1983-10-01), Izu et al.
J. R. Hollahan, "Deposition of Plasma Silicon Oxide Thin Films in a Production Planar Reactor", J. Electrochem. Soc., vol. 126, pp. 930-934, (1979).
A. C. Adams et al., "Characterization of Plasma-Deposited Silicon Nitride", J. Electrochem. Soc., vol. 128, pp. 1545-1551, (1981).
Fuji 'Xerox Co., Ltd.
Meller Michael N.
Weisstuch Aaron
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