Magnetoresistance effect element, magnetic head, and...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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10659299

ABSTRACT:
A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.

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Fukuzawa et al, “Specular spin-valve films with an FeCo nano-oxide layer by ion-assisted oxidation”, May 15, 2002, J. Ap. Phys. v. 91 No. 10 p. 6684).
Physical Review B, vol. 45 No. 2, pp. 806-813, (Jan. 1, 1992), Giant magnetoresistance of magnetically soft sanwiches: Dependence on temperature and on layer thicknesses, B. Dieny et al.
Applied Physics, vol. 69, pp. 4774-4779, (Apr. 15, 1991) Magnetotransport properties of magnetically soft spin-valve structures (invited), B. Dieny et al.
“Handbook of oxides”, Japan-Soviet Press bureau, 1969; This reference is related to a thermo-dynamic parameter for oxides.

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