Method for forming potassium/sodium ion sensing device...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal

Reexamination Certificate

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C257S414000, C257SE21400

Reexamination Certificate

active

10891569

ABSTRACT:
A potassium/sodium ion sensing device applying an extended-gate field effect transistor, which using an extended-gate ion sensitive field effect transistor (EGFET) as base to fabricate a potassium/sodium ion sensing device, using the extended gate of the extended-gate ion sensitive field effect transistor as a signal intercept electrode, and immobilizing the hydro-aliphatic urethane diacrylate (EB2001) intermixed with electronegative additive, potassium ionophore, sodium ionophore, and the like, to fabricate a potassium/sodium ion sensing electrode. The present invention utilizes the photocurability and good hydrophilicity of the hydro-aliphatic urethane diacrylate (EB2001), and fixes potassium/sodium ionophore, can obtain a non-wave filter, single-layer, stable signal potassium and sodium ion sensor. Thus, when the present invention is applied to measure the concentration of potassium/sodium ions in a sample, the mutual interference between potassium/sodium ion electrodes can be reduced, so the measured value can be more close to the actual value.

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Yin et al.; Study of indium tin oxide thin film for separative extended gate ISET; Mater. Chem. Phys.; vol. 70; pp. 12-16; 2001.
Pan et al.; Using polypyrrole as the contrast pH detector to fabricate a whole solid-state pH sensing device; Sensors Journal, IEEE; vol. 3, Issue 2; Apr. 2003; pp. 164-170.

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