Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-06-19
2007-06-19
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S020000, C438S149000
Reexamination Certificate
active
10980838
ABSTRACT:
In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.
REFERENCES:
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 6794277 (2004-09-01), Machida et al.
patent: 2001/0010391 (2001-08-01), Nakajima et al.
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patent: 2003/0155572 (2003-08-01), Han et al.
patent: 2003/0173601 (2003-09-01), Machida et al.
Cho Se-young
Kim Do-young
Kwon Jang-yeon
Noguchi Takashi
Park Kyung-bae
Ingham John
Lee & Morse P.C.
Samsung Electroncis Co., Ltd.
Weiss Howard
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