Semiconductor element and manufacturing method thereof

Details Semiconductor element and manufacturing method thereof Semiconductor element and manufacturing method thereof

2007-11-20

2007-11-20

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S786000

Reexamination Certificate

active

11208549

ABSTRACT:
In a semiconductor element, if a crack is generated inside a bonding pad, the crack does not propagate inside the semiconductor element. The semiconductor element has an electrode on a surface thereof. A wiring layer is formed inside the semiconductor element. A conductive layer is formed separate from the wiring layer so as to form a surface of the electrode. A plurality of pole-like members are formed of a conductive material and extending between the wiring layer and the conductive layer and arranged adjacent to each other. The insulating layer is formed of an insulating material filled between the plurality of pole-like members. A frame member extends between the wiring layer and the conductive layer so as to surround the plurality of pole-like members and the insulating layer together.

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