Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-01-09
2007-01-09
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S758000, C438S411000, C438S619000
Reexamination Certificate
active
11131084
ABSTRACT:
A multi-layered wire structure includes a substrate, a plurality of first conductive lines formed in a first layer over the substrate extending in parallel to each other in a first direction, a plurality of second conductive lines formed in a second layer over the first layer extending in parallel to each other in a second direction orthogonal to the first direction, a plurality of sets of third conductive lines formed in the second layer extending in the first direction, each set of third conductive lines corresponding to one of the first conductive lines, and a plurality of sets of conductive paths formed between the first layer and the second layer, each set of conductive paths corresponding to one of the first conductive lines and one set of third conductive lines and electrically connecting the corresponding first conductive line to the corresponding set of third conductive lines.
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Chen Chi-Lin
Chen Yu-Cheng
Akin Gump Strauss Hauer & Feld & LLP
Clark S. V.
Industrial Technology Research Institute
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