Method of forming patterns

Details Method of forming patterns Method of forming patterns

2007-05-29

2007-05-29

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S950000, C438S975000, C430S005000, C430S022000

Reexamination Certificate

active

11033970

ABSTRACT:
In forming a mask pattern on a circuit board, a mask pattern of N-layer structure is formed in a region where the mechanical strength of the circuit board needs to be increased. N photosensitive layers are first stacked on a substrate so that they becomes lower in sensitivity from the first photosensitive layer toward the Nthphotosensitive layer. In the first photosensitive layer (bottom layer), a first pattern is formed and has the same shape as a predetermined pattern to be formed on the circuit board. In the Kthphotosensitive layer (N≧K≧2), a Kthpattern is formed so that the Kthpattern is smaller than a (K−1)stpattern formed in the (K−1)stphotosensitive layer and arranged inside the (K−1)stpattern.

REFERENCES:
patent: 6896998 (2005-05-01), Mizukoshi
patent: 2002/0012851 (2002-01-01), Coronel et al.
patent: 6-169146 (1994-06-01), None

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