Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-05-15
2007-05-15
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290, C365S185320, C257S314000, C257S318000
Reexamination Certificate
active
11242094
ABSTRACT:
The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.
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Drury Robert
Hopper Peter J.
Lindorfer Philipp
Vashchenko Vladislav
Eastman Kodak Company
Phan Trong
Watkins Peyton C.
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