Storage elements using nanotube switching elements

Details Storage elements using nanotube switching elements Storage elements using nanotube switching elements

2007-01-09

2007-01-09

Ton, My-Trang Nu (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Particular stable state circuit

Reexamination Certificate

active

11032983

ABSTRACT:
Data storage circuits and components of such circuits constructed using nanotube switching elements. The storage circuits may be stand-alone devices or cells incorporated into other devices or circuits. The data storage circuits include or can be used in latches, master-slave flip-flops, digital logic circuits, memory devices and other circuits. In one aspect of the invention, a master-slave flip-flop is constructed using one or more nanotube switching element-based storage devices. The master storage element or the slave storage element or both may be constructed using nanotube switching elements, for example, using two nanotube switching element-based inverters. The storage elements may be volatile or non-volatile. An equilibration device is provided for protecting the stored data from fluctuations on the inputs. Input buffers and output buffers for data storage circuits of the invention may also be constructed using nanotube switching elements.

REFERENCES:
patent: 4979149 (1990-12-01), Popovic et al.
patent: 5903010 (1999-05-01), Flory et al.
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6348700 (2002-02-01), Ellenbogen et al.
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6518156 (2003-02-01), Chen et al.
patent: 6548841 (2003-04-01), Frazier et al.
patent: 6559468 (2003-05-01), Kuekes et al.
patent: 6574130 (2003-06-01), Segal et al.
patent: 6643165 (2003-11-01), Segal et al.
patent: 6661270 (2003-12-01), Nagata
patent: 6673424 (2004-01-01), Lindsay et al.
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 6750471 (2004-06-01), Bethune
patent: 6781166 (2004-08-01), Lieber et al.
patent: 6784028 (2004-08-01), Rueckes et al.
patent: 6794914 (2004-09-01), Sani et al.
patent: 6803840 (2004-10-01), Hunt et al.
patent: 6809465 (2004-10-01), Jin
patent: 6835591 (2004-12-01), Rueckes et al.
patent: 6968486 (2005-11-01), Matsushima
patent: 2001/0023986 (2001-09-01), Mancevski
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2002/0175390 (2002-11-01), Goldstein et al.
patent: 2003/0021966 (2003-01-01), Segal et al.
patent: 2003/0124325 (2003-07-01), Rueckes et al.
patent: 2004/0175856 (2004-09-01), Jaiprakash et al.
patent: 2004/0181630 (2004-09-01), Jaiprakash et al.
patent: 2005/0035344 (2005-02-01), Bertin et al.
patent: 2005/0035367 (2005-02-01), Bertin et al.
patent: 2005/0035786 (2005-02-01), Bertin et al.
patent: 2005/0035787 (2005-02-01), Bertin et al.
patent: 2005/0036365 (2005-02-01), Bertin et al.
patent: 2005/0037547 (2005-02-01), Bertin et al.
patent: WO 01/03208 (2001-01-01), None
patent: WO 01/44796 (2001-06-01), None
patent: WO 03/091486 (2003-11-01), None
patent: WO 04/065655 (2004-08-01), None
patent: WO 04/065657 (2004-08-01), None
patent: WO 04/065671 (2004-08-01), None
Ami, S. et al., “Logic gates and memory cells based on single C60electromechanical transistors.” Nanotechnology, 2000, vol. 12, pp. 44-52.
Avouris, P. et al., “Carbon Nanotube Electronics.” Chemical Physics, 2001,vol. 281, pp. 429-445.
Bachtold, A. et al., “Logic Circuits with Carbon Nanotube Transistors.” Science, 2001, vol. 294, pp. 1317-1320.
Bachtold, A. et al., “Logic Circuits Based on Carbon Nanotubes.” Physica E, 2003,vol. 16, pp. 42-46.
Collier, C.P. et al., “Electronically Configurable Molecular-Based Logic Gates.” Science 1999, vol. 285, pp. 391-394.
Dehon, A., “Array-Based Architecture for FET-Based, Nanoscale Electronics”, IEEE Transactions on Nanotechnology, 2003, vol. 2(1), pp. 23-32.
Dequesnes, M et al., “Simulation of carbon nanotube-based nanoelectromechanical switches.” Computational Nanoscience and Nanotechnology, 2002, pp. 383-386.
Dequesnes, M. et al., “Calculation of pull-in voltages for carbon-nanotube-based nanoelectromechanical switches.” Nanotechnology, 2002, vol. 13, pp. 120-131.
Derycke, V. et al., “Carbon Nanotube Inter- and Intramolecular Logic Gates.” Nano Letters, 2001, vol. 1(9), pp. 453-456.
Franklin, N.R. et al., “Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems.” Appl. Phys. Lett., 2002, vol. 81(5), pp. 915-915.
Fuhrer, M.S. et al., “High-Mobility Nanotube Transistor Memory.” Nano Letters, 2002, vol. 2(7), pp. 755-759.
Hoenlein, W. et al., “Carbon nanotubes for microelectronics: status and future prospects.” Materials Science and Engineering, 2003, vol. 23, pp. 663-669.
Huang, Y. et al., “Logic Gates and Computation from Assembled Nanowire Building Blocks.” Science, 2001, vol. 294, pp. 1313-1316.
Javey, A. et al., “Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators.” Nano Letters, 2002, vol. 2(9), pp. 929-932.
Kinaret, J.M. et al., “A carbon-nanotube-based nanorelay.” Applied Physics Letters, 2003, vol. 82(8), pp. 1287-1289.
Lin, Y.-M. et al., “Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering.” Nano Lett. 2004, vol. 4(5), pp. 947-950.
Martel, R. et al., “Carbon Nanotube Field-Effect Transistors and Logic Circuits.” DAC, 2002, vol. 7.4, pp. 94-98.
Rueckes, T. et al., “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing.” Science, 2000. vol. 289, pp. 94-97.
Tans, S.J. et al., “Room-temperature transistor based on a single carbon nanotube.” Nature, 1998, vol. 393, pp. 49-52.
Zhan, W. et al., “Microelectrochemical Logic Circuits.” J. Am. Chem. Soc., 2003, vol. 125, pp. 9934-9935.

Affiliated with

Also associated with

Rating

Storage elements using nanotube switching elements does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Storage elements using nanotube switching elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Storage elements using nanotube switching elements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3814503