Method of forming silicon carbide films

Details Method of forming silicon carbide films Method of forming silicon carbide films

2007-07-03

2007-07-03

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Electrostatic charge, field, or force utilized

C427S573000, C427S574000, C427S577000, C427S578000

Reexamination Certificate

active

10414467

ABSTRACT:
A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.

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