Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2007-06-26
2007-06-26
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C257S797000
Reexamination Certificate
active
11061469
ABSTRACT:
Disclosed are a semiconductor wafer, a semiconductor device, and a method of manufacturing the semiconductor device, which are capable of easily carrying out an alignment between a semiconductor substrate and an electron beam exposure apparatus. There is provided a method including steps of: forming an interlayer insulating film25on a gate electrode17aand a conductive film17, as well as in a first opening17b; forming in the interlayer insulating film25asecond opening25aincluding the first opening17b; forming a hole14ain an element isolation insulating film14under the first opening17b; by use of the first opening17band the hole14aas an alignment mark27used for the alignment in a state where a resist28is applied, measuring an intensity of a reflected electron EBreffrom the alignment mark27, thus aligning the electron beam exposure apparatus with the semiconductor substrate10; exposing with an electron beam EB the resist28existing in a hole formation region of a first region I; and developing the resist28to make a resist pattern28e.
REFERENCES:
patent: 6762111 (2004-07-01), Fukuda
patent: 2004/0198018 (2004-10-01), Fukuda
patent: 2006/0072807 (2006-04-01), Bultman et al.
patent: 6-252025 (1994-09-01), None
Chambliss Alonzo
Westerman, Hattori, Daniels & Adrian , LLP.
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