Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2007-06-12
2007-06-12
Patel, Paresh (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
Reexamination Certificate
active
11314458
ABSTRACT:
In an FET-characteristic measuring method, a predetermined bias voltage output from an output terminal of a bias tee is applied to the drain of an FET, and a pulse output from a pulse generator is applied to the gate thereof to thereby cause drain current to be generated. The drain current is converted by a load impedance, connected to an AC output terminal of the bias tee, into a voltage pulse, and is measured based on the voltage pulse. The method includes increasing the bias voltage by an amount corresponding to a voltage drop caused by the load impedance and repeating measurement of a value of the voltage pulse a predetermined number of times, and applying extrapolation to the last two values of the voltage-pulse values obtained by the predetermined number of repeated measurements to determine a drain voltage to be applied to the FET.
REFERENCES:
patent: 3965420 (1976-06-01), Bennett
patent: 5838164 (1998-11-01), Chen
patent: 6407573 (2002-06-01), Yamaguchi et al.
“Measurement of I-V Curves of Silicon-on-Insulator (SOI) MOSFET's Without Self-Heating.” K.A. Jenkins et al. IEEE Electron Device Letters, vol. 16, No. 4, Apr. 1995, Abstract only.
Agilent Technologie,s Inc.
Patel Paresh
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