Semiconductor light-receiving device

Details Semiconductor light-receiving device Semiconductor light-receiving device

2007-05-08

2007-05-08

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S010000, C257S011000, C257S021000, C257S053000, C257S054000, C257S055000, C257S056000, C257S080000, C257S081000, C257S082000, C257S083000, C257S084000, C257S085000, C257S113000, C257S114000, C257S115000, C257S116000, C257S117000, C257S118000, C257S185000, C257S186000, C257S187000, C257S188000, C257S189000, C257S225000, C257S257000, C257S258000, C257S290000, C257S291000, C257S292000, C257S293000, C257S294000, C257S414000, C257S431000, C257S432000, C257S466000, C257S749000

Reexamination Certificate

active

10864797

ABSTRACT:
A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the boundary between the portion of the p-type layer and the middle region. An n-type layer on the p-type layer has a top surface including a portion on a level with the upper region. Another electrode covers at least part of the boundary between the portion of the n-type layer and the upper region.

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