Plasma CVD apparatus for manufacturing a semiconductor device

Details Plasma CVD apparatus for manufacturing a semiconductor device Plasma CVD apparatus for manufacturing a semiconductor device

1993-03-01

1996-06-04

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723E, 118715, 118722, C23C 1600

Patent

active

055229352

ABSTRACT:
A plasma CVD apparatus comprises a housing for defining a reaction chamber, a semiconductor wafer holder and lower electrode located within the housing and configured to hold and support a semiconductor wafer thereon. The semiconductor wafer holder and lower electrode is connected to a common ground terminal. An upper electrode is located within the housing and connected to a radio frequency voltage supply. The an upper electrode is positioned separately from but opposite to the semiconductor wafer holder and lower electrode, so that the radio frequency voltage causes a plasma region on a deposition surface of the semiconductor wafer held by semiconductor wafer holder and lower electrode. An ultraviolet lamp is located to irradiate an ultraviolet ray on the deposition surface of the semiconductor wafer held by the semiconductor wafer holder and lower electrode.

REFERENCES:
patent: Re30244 (1980-01-01), Alexander
patent: 3757733 (1973-09-01), Reinberg
patent: 4513021 (1985-04-01), Purdes
patent: 4664938 (1987-05-01), Walker
patent: 4811684 (1989-03-01), Tashiro et al.
patent: 4919077 (1990-04-01), Oda et al.
patent: 4989544 (1991-02-01), Yoshikawa
patent: 5110437 (1992-05-01), Yamada
Sze, VLSI Technology, p. 237, McGraw-Hill, 1988.
Hinson, "The Basics of Plasmas", The Book of Basics, Materials Research Corp., pp. 1-4.
Webster's New World Dictionary, Simon and Schuster, 1988, p. KK19.

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