Method of correcting amplitude defect in multilayer film of...

Details Method of correcting amplitude defect in multilayer film of... Method of correcting amplitude defect in multilayer film of...

2007-03-13

2007-03-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21218

Reexamination Certificate

active

11195982

ABSTRACT:
By entering a low acceleration Si ion beam of 500 V or lower or a low acceleration Si ion beam of 500 V-2000 V having been slanted such that an injection depth becomes shallow, which has been mass-separated from a liquid alloy ion source containing Si by a mass separator and converged by an ion optical system, the amplitude defect near a surface of the Mo/Si multilayer film or the Mo2C/Si multilayer film is removed by a physical sputter or a gas assist etching such that an interlayer of the Mo/Si multilayer film or the Mo2C/Si multilayer film in a lower layer is not destroyed.

REFERENCES:
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 5083033 (1992-01-01), Komano et al.
patent: 6967168 (2005-11-01), Stearns et al.

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