Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-01-23
2007-01-23
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S058000, C257S059000, C257S066000, C257S067000, C257S068000, C257S069000, C257S070000, C257S071000, C257S072000, C257S073000, C257S291000, C257S292000, C257S293000, C257S294000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S359000, C257S401000, C257S618000, C257S622000, C257S623000, C257S626000
Reexamination Certificate
active
10761847
ABSTRACT:
The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film transistor with a larger area, and suitable for mass production. These objects are achieved by a thin-film transistor formed on a substrate1with a finely processed concavoconvex surface2, in which a source electrode and a drain electrode are formed on adjacent convex portions of the concavoconvex surface2, with a channel and a gate being formed on a concave area between the convex portions. A gate electrode5, a gate insulating film6and a semiconductor channel layer7are laminated in this order on the concave area from the bottom surface of the concave portion toward the top surface. Preferably, in this thin-film transistor, the concavoconvex surface is formed of a curing resin, a semiconductor constituting a thin-film transistor is formed of a semiconductor such as polycrystal silicon or an organic semiconductor material, and the substrate is formed of glass, plastic or a composite material of these materials.
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Saito Wataru
Yamashita Yudai
Dai Nippon Printing Co. Ltd.
Ladas & Parry LLP
Soward Ida M.
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