Chemistry: electrical current producing apparatus – product – and – Having earth feature
Reexamination Certificate
2007-01-02
2007-01-02
Ruthkosky, Mark (Department: 1745)
Chemistry: electrical current producing apparatus, product, and
Having earth feature
C429S047000, C427S488000, C427S576000
Reexamination Certificate
active
10336162
ABSTRACT:
The present invention discloses porous fuel cell electrode structures, assemblies, and systems having one or more conformal metallic layers selectively deposited on one or more pore surfaces, as well as to various methods relating thereto. In one embodiment, the present invention is directed to an electrode structure adapted for use with a fuel cell system (e.g., a hydrogen or a direct hydrocarbon fuel cell system), wherein the electrode structure comprises a substrate or support structure having one or more discrete porous bulk matrix regions disposed across a top surface of the substrate. In this embodiment, each of the one or more discrete porous bulk matrix regions is defined by a plurality of acicular pores that extend through the substrate or support structure. The plurality of acicular pores define inner pore surfaces, and the inner pore surfaces have a conformal electrically conductive layer thereon, as well as a plurality of catalyst particles.
REFERENCES:
patent: 4874484 (1989-10-01), Foell et al.
patent: 5483919 (1996-01-01), Yokoyama et al.
patent: 5543239 (1996-08-01), Virkar et al.
patent: 5672439 (1997-09-01), Wilkinson et al.
patent: 5964991 (1999-10-01), Kawasaki et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6037073 (2000-03-01), Besmann et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6143659 (2000-11-01), Leem
patent: 6171720 (2001-01-01), Besmann et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6297185 (2001-10-01), Thompson et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6399236 (2002-06-01), Furuya
patent: 6403245 (2002-06-01), Hunt
patent: 6426126 (2002-07-01), Conover et al.
patent: 6541149 (2003-04-01), Maynard et al.
patent: 6558770 (2003-05-01), Lehmann et al.
patent: 6638654 (2003-10-01), Jankowksi et al.
patent: 6641948 (2003-11-01), Ohlsen et al.
patent: 6720105 (2004-04-01), Ohlsen et al.
patent: 6808840 (2004-10-01), Mallari et al.
patent: 6811916 (2004-11-01), Mallari et al.
patent: 2002/0182479 (2002-12-01), Mallari et al.
patent: 2002/0197522 (2002-12-01), Lawrence et al.
patent: 2003/0003347 (2003-01-01), D'Arrigo et al.
patent: 2003/0039874 (2003-02-01), Jankowski et al.
patent: 2003/0082431 (2003-05-01), Klitsner et al.
patent: 2003/0170524 (2003-09-01), Kordesch et al.
patent: 19820756 (1998-05-01), None
patent: WO 00/45457 (2000-08-01), None
patent: WO 00/69007 (2000-11-01), None
patent: WO 01/39307 (2001-05-01), None
Utriainen, Mikko et al., “Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2(M=Ni, Cu, Pt) precursors.”Applied Surface Science157 (2000) 151-158.
Utriainen, Mikko et al., “Porous silicon host matrix for deposition by atomic layer epitaxy.”Thin Solid Films297 (1997) 39-42.
Lakomaa, Eeva-Liisa, “Atomic layer epitaxy (ALE) on porous substrates.”Applied Surface Science75 (1994) 185-196.
Düsco, et al., “Deposition of Tin Oxide into Porous Silicon by Atomic Layer Epitaxy,”J. Electrochem. Soc.,143 (2): 683-687, Feb. 1996.
Aarik, Jaan et al., “Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water.”Thin Solid Films370 (2000) 163-172.
Sammelselg, V. et al., “TiO2thin films by atomic layer deposition: a case of uneven growth at low temperature.”Applied Surface Science134 (1998) 78-86.
Imai, Shigeru et al., “Atomic layer epitaxy of Si using atomic H.”Thin Solid Films225 (1993) 168-172.
Niinisto, Lauri et al., “Synthesis of oxide thing films and overlayers by atomic layer epitaxy for advanced applications.”Materials Science and EngineeringB41 (1996) 23-29.
Ritala, Mikko & Markku Leskela, “Atomic layer epitaxy—a valuable tool for nanotechnology?”Nanotechnology10 (1999) 19-24.
Matero, Raija et al., “Effect of water dose on the atomic layer deposition rate of oxide thin films.”Thin Solid Films368 (2000) 1-7.
Suntola, Tuomo, “Surface chemistry of materials deposition at atomic layer level.”Applied Surface Science100/101 (1996) 391-398.
Yamada, Akira et al., “Atomic layer deposition of ZnO transparent conducting oxides.”Applied Surface Science112 (1997) 216-222.
Matsui, Yuichi et al., “Growth Mechanism of Ru Films Prepared by Chemical Vapor Deposition Using Bis(ethylcyclopentadientyl)ruthenium Precursor.”Electrochemical and Solid State Letters4 (2) C9-C12 (2001).
Park, Song-Eon et al., “RuO2thin film fabrication with plasma-enhanced chemical vapor deposition.”Thin Solid Flims341 (1999) 52-54.
Fang, Q.L. et al., “Ruthenium Oxide Film Electrodes Prepared at Low Temperatures for Electrochemical Capacitors.”Journal of the Electrochemical Society148 (8) A833-A837 (2001).
Suntola, T. and M. Simpson, “Atomic Layer Epitaxy.” Blackie and Son Ltd., Glasgow, 1990.
Aylett et al., “Metallisation of Porous Silicon by Chemical Vapour Infiltration and Deposition.”Thin Solid Films276 (1996) 253-256.
Kukli, Kaupo et al., “Influence of Atomic Layer Deposition Parameters on the Phase Content of Ta205Films.”J. Crystal Growth212 (2000) 459-468.
Braun, Alexander, E., “ALD Breaks Materials, Conformality Barriers.” Semiconductor International Online website, http://www.e-insite.net/semiconductor/index.asp—layout=articlePrint&articleID=CA164276, Oct. 1, 2001.
Sherman, Arthur, “Atomic Layer Deposition.” UC Berkeley Extension, http://ww.unex.berkeley.edu/eng/br335/1-1.html. Sep. 24-25, 2001.
Press release, “Applied Materials Launches New Atomic Layer Deposition (ALD) Technology for Nanometer-Generation Chips.” http://www.appliedmaterials.com/products/ALD.html. Sep. 2001.
Faguy, Peter W., “Combustion Chemical Vapor Deposition: A New Technology for Fabricating Fuel Cell and Battery Electrodes and Electrolyte Layers.”MicroCoating Technologies,2001.
Ritala, Mikko & Markku Leskela, “Atomic Layer Deposition.”Handbook of Thin Film Materials, vol. 1: Deposition and Processing of Thin Films,H.S. Nalwa (ed), Academic Press, 2002, pp. 103-159.
Ylilammi, Marrku, “Monolayer Thickness in Atomic Layer Deposition.”Thin Solid Films279 (1996) 124-130.
Elam, J.W. et al., “Kinetics of the WF6and Si2H6Surface Reactions During Tungsten Atomic Layer Deposition.”Surface Science479 (2001) 121-135.
Klaus, J.W. et al., “Atomically Controlled Growth of Tungsten and Tungsten Nitride Using Sequential Surface Reactions.”Applied Surface Science162-163 (2000) 497-491.
Kang, Sang Yeol et al., “Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition.”Journal of the Korean Physical Society,vol. 37, No. 6, Dec. 2000, pp. 1040-1044.
Kang, Sang Yeol et al., “Metallorganic Chemical Vapor Deposition of Ru Films Using Cyclopentadienyl-Propylcyclopentadienylruthenium(II) and Oxygen.”Journal of the Electrochemical Society, 149 (6) C317-C323 (2002).
Hiratani, Masahiko et al., “Conformal Platinum Thin Films Prepared by Chemical Vapor Deposition under High Oxygen Partial Pressure.”Electrochemical and Solid-State Letters,5 (2) C28-C30 (2002).
Park, Sung-Eon et al., “Metallorganic Chemical Vapor Deposition of Ru and Ru02Using Ruthenocene Precursor and Oxygen Gas.”Journal of the Electrochemical Society,147 (1) 203-209 (2000).
Hiratani, Masahiko et al., “Platinum Film Growth by Chemical Vapor Deposition Based on Autocatalytic Oxidative Decomposition.”Journal of the Electrochemical Society,148 (8) C524-C527 (2001).
Kwak et al., “Study of expitaxial platinum thin films grown by metalorganic chemical vapor deposition.”J. Appl. Phys.72 (8) 3735-3740, Oct. 15, 1992.
Andrew M. Hecht,Planer Silicon PEM Fuel Cell,undated.
Helen L Maynard Jeremy P. Meyers,Miniaturized Fuel Cells for Portable Power, presented Apr. 27, 20
Loop Thomas E.
Neah Power Systems, Inc.
Ruthkosky Mark
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