Semiconductor device having an interconnect that increases...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S758000, C257S760000, C257SE21579, C257SE21584, C438S637000, C438S672000, C438S700000

Reexamination Certificate

active

10994479

ABSTRACT:
The present invention provides a semiconductor device capable of suppressing an increase in electrical resistance of a narrow interconnect, while keeping reliability of a wide interconnect from being degraded. A semiconductor device comprises a plurality of interconnect layers, and an interconnect in at least one interconnect layer among the plurality of interconnect layers contains an impurity, and the wider the interconnect in the at least one interconnect layer is, the higher concentration of the impurity the interconnect contains.

REFERENCES:
patent: 6433402 (2002-08-01), Woo et al.
patent: 6943112 (2005-09-01), Basol et al.
patent: 9-289214 (1997-11-01), None

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