Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-09-25
2007-09-25
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000, C257S760000, C257SE21579, C257SE21584, C438S637000, C438S672000, C438S700000
Reexamination Certificate
active
10994479
ABSTRACT:
The present invention provides a semiconductor device capable of suppressing an increase in electrical resistance of a narrow interconnect, while keeping reliability of a wide interconnect from being degraded. A semiconductor device comprises a plurality of interconnect layers, and an interconnect in at least one interconnect layer among the plurality of interconnect layers contains an impurity, and the wider the interconnect in the at least one interconnect layer is, the higher concentration of the impurity the interconnect contains.
REFERENCES:
patent: 6433402 (2002-08-01), Woo et al.
patent: 6943112 (2005-09-01), Basol et al.
patent: 9-289214 (1997-11-01), None
Le Dung A.
NEC Electronics Corporation
Young & Thompson
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