Insulated gate bipolar transistor having a high switching...

Details Insulated gate bipolar transistor having a high switching... Insulated gate bipolar transistor having a high switching...

2007-01-09

2007-01-09

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257SE27055, C438S133000

Reexamination Certificate

active

10994064

ABSTRACT:
An insulated gate bipolar transistor has a P-type collector region containing a P-type impurity such as boron. A relatively thin N-type buffer region containing arsenic in a relatively high concentration is formed on the collector region via an anti-diffusion region. The anti-diffusion region is provided in such a way that its thickness is the same as or slightly smaller than the distance over which the P-type impurity is diffused from the collector region toward the buffer region in a device fabrication process.

REFERENCES:
patent: 3664896 (1972-05-01), Duncan
patent: 6448588 (2002-09-01), Yun et al.
patent: 05-055583 (1993-03-01), None

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