Suppression of leakage current in image acquisition

Details Suppression of leakage current in image acquisition Suppression of leakage current in image acquisition

Filed on

2007-09-04

Date issued

2007-09-04

Examiner

Hjerpe, Richard (Department: 2629)

Patent Class

Computer graphics processing and selective visual display system

SubClass

Plural physical display element control system

SubSubClass

Display elements arranged in matrix

Other Related Categories

C438S149000, C257S292000

Type

Reexamination Certificate

Status

active

Patent number

10635509

Description

ABSTRACT:
In a manufacturing process of a display device, hydrogenation in an I layer of photodiodes D1and D2is progressed less than that in a channel portion of a pixel TFT, and a defect density due to dangling bonds not terminated in the I layer of the photodiodes D1and D2is made higher than a defect density in the channel portion of the pixel TFT. Thus, while suppressing a leakage current of the pixel TFT, the sensitivity of the photodiodes D1and D2to light is improved. Moreover, a gate electrode is provided above an i region of a pin-type optical sensor diode with an insulating film interposed therebetween. Thus, a gate voltage can control a threshold of a bias voltage when a current starts to flow into the optical sensor diode and a leakage current is prevented from flowing into the optical sensor diode.

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U.S. Appl. No. 10/924,940, filed Aug. 25, 2004, Nakamura et al.

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