Semiconductor memory

Details Semiconductor memory Semiconductor memory

1984-06-01

1986-11-11

Carroll, J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 51, 357 59, 365186, H01L 2978, H01L 2702, H01L 2904, G11C 1134

Patent

active

046225706

ABSTRACT:
A semiconductor memory device of a one-transistor type is manufactured by using a so-called double-layer technology. The device comprises a buried-channel type transistor having normally-off characteristics and a capacitor having normally-on characteristics to provide high integrated density. An insulating layer between two conductive layers for forming the transistor and the capacitor is relatively thick to provide increased breakdown voltage and reduced parasitic capacitance.

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