Metal oxide/indium phosphide devices

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357 4, 357 30, 357 17, 357 52, 357 59, H01L 2714

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041212380

ABSTRACT:
Devices using a transparent conductive layer of indium oxide or indium tin oxide, and a layer of a direct gap semiconductor material have been found to operate as solar cells and as light emitting devices. Exemplary of such devices is an indium tin oxide/p-InP cell which shows a 12.5% solar power conversion efficiency and also emits a red colored light when biased.

REFERENCES:
patent: 3539883 (1970-11-01), Harrison
patent: 3560812 (1971-02-01), Hall
patent: 3614549 (1971-10-01), Lorenz
patent: 3978510 (1976-08-01), Kasper
patent: 4016586 (1977-04-01), Anderson
patent: 4024558 (1977-05-01), Merrin
Hovel et al., I.B.M. Tech. Discl. Bull., vol. 18, No. 5, Oct. 1975, p. 1575.
Dubow et al., Appl. Phys. Lett., vol. 29, No. 8, 15 Oct. 1976.

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