Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-07-24
2007-07-24
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S059000, C257S066000, C257S075000, C257S088000, C257S291000, C257SE29177, C257SE29137, C257SE29145, C257SE29147, C257SE29151, C257SE29202, C257SE33001
Reexamination Certificate
active
11034767
ABSTRACT:
There is provided a semiconductor device having TFTs whose thresholds can be controlled.There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed on a substrate, wherein an arbitrary voltage is applied to the back gate electrode.
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Koyama Jun
Nakajima Setsuo
Sakamoto Naoya
Yamazaki Shunpei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Soward Ida M.
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