Plasma CVD apparatus

Details Plasma CVD apparatus Plasma CVD apparatus

2007-01-02

2007-01-02

Hassanzadeh, Parviz (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C156S345410, C156S345420, C118S7230ME, C118S7230MA, C118S7230MR, C118S7230AN, C315S111210, C315S111510, C315S111810

Reexamination Certificate

active

10450788

ABSTRACT:
A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a vapor growth synthesizing method. A cooler is disposed between the annular waveguide and the reaction chamber to maintain the low temperature of the annular waveguide.

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