Microwave apparatus for vacuum treating and heating a semiconduc

Details Microwave apparatus for vacuum treating and heating a semiconduc Microwave apparatus for vacuum treating and heating a semiconduc

1985-02-25

1986-11-11

Leung, Philip H.

Electric heating

Metal heating

Of cylinders

219 1055A, 427 451, H05B 680

Patent

active

046224475

ABSTRACT:
A semiconductor substrate arranged in a vacuum treating chamber is heated by using microwaves. The chamber is provided with a window plate pervious to microwaves, on which window plate the substrate is mounted. A microwave generator is arranged outside of the chamber. The radiated microwaves are guided to the window plate, penetrate it, and are absorbed by the semiconductor substrate, with result that the substrate is directly heated to a predetermined temperature in a short time. Since no microwaves leak through the substrate, no parts in the chamber are heated.

REFERENCES:
patent: 2599033 (1952-06-01), Wild
patent: 3276138 (1966-10-01), Fritz
patent: 3551090 (1970-12-01), Brumfield et al.
patent: 4128751 (1978-12-01), Sale
patent: 4138306 (1979-02-01), Niwa
patent: 4474625 (1984-10-01), Cohen et al.

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