Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2007-07-10

2007-07-10

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S094000, C257S098000, C257SE33013, C372S043010, C372S072000

Reexamination Certificate

active

10900281

ABSTRACT:
A semiconductor light-emitting device includes a semiconductor light-emitting thin film, the thickness h of which satisfies the following conditional equation:0.9×(2⁢m+1)⁢λ04⁢n≦h≦1.1×(2⁢m+1)⁢λ04⁢nand m in the conditional equation satisfies the following conditional equation:2⁢m+1m⁡(m+1)⁢λ02>ξwhere λ0is a center wavelength of light generated in the semiconductor light-emitting thin film, n is a refractive index of the semiconductor light-emitting thin film, m is 0 or a positive integer, and ξ is a half bandwidth of a light emission spectrum when there is no interference between light rays generated in the semiconductor light-emitting thin film.

REFERENCES:
patent: 6097041 (2000-08-01), Lin et al.
patent: 6188083 (2001-02-01), Kano
patent: 2003/0215266 (2003-11-01), Ishida et al.
patent: 2002-217450 (2002-08-01), None

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