Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-05-15
2007-05-15
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S226000, C257S239000, C257S291000, C257S292000, C257SE27135
Reexamination Certificate
active
11081773
ABSTRACT:
To provide a solid-state imaging device in which the number of transistors for each signal readout circuit provided in a semiconductor substrate side is reduced and the number of image signal readout lines is reduced, solid-state imaging device a semiconductor substrate; a stacked photoelectric conversion films detecting different colors contained in an incident light; and pixel electrode films partitioned in accordance with pixels, wherein the semiconductor substrate includes: a plurality of color selection transistors corresponding to one of the pixels, wherein the color selection transistors each corresponds to one of the photoelectric conversion films and connects to one of the pixel electrode films on the one of the photoelectric conversion films so as to be capable of selecting the one of the photoelectric conversion films; and a charge detection cell corresponding to one of the pixels, the charge detection cell being common to the photoelectric conversion films.
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Birch & Stewart Kolasch & Birch, LLP
Fujifilm Corporation
Liu Benjamin Tzu-Hung
Tran Minhloan
LandOfFree
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