Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2007-01-02
2007-01-02
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257SE23004, C257SE23021, C257SE23060, C257SE23101, C257SE23114, C257S737000, C257S728000, C257S778000, C257S692000, C257S693000, C257S681000, C257S698000, C257S786000, C257S779000
Reexamination Certificate
active
10289384
ABSTRACT:
A semiconductor device includes a semiconductor substrate having a main surface, the main surface including a first area formed with a high-frequency circuit element and a second area located around the first area and formed with a low-frequency circuit element. The semiconductor device also includes a sealing resin which covers the main surface; a plurality of first external terminals which are formed above the second area and which are electrically connected to the high-frequency circuit element, the first external terminals protruding from the surface of the sealing resin. The semiconductor device further includes a plurality of second external terminals which are formed above the second area and which are electrically connected to the low-frequency circuit element, the second external terminals protruding from the surface of the sealing resin.
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Oki Electric Industry Co. Ltd.
VolentineFrancos&Whitt,PLLC
Williams Alexander Oscar
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