Method of fabricating X-ray detecting device

Details Method of fabricating X-ray detecting device Method of fabricating X-ray detecting device

2007-09-11

2007-09-11

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S061000, C257SE51005

Reexamination Certificate

active

11003389

ABSTRACT:
A method of fabricating an X-ray detecting device that is capable of preventing breakage of a transparent electrode. In the method, patterning of first and second insulating films occurs at different etching rates, with an etching ratio of the second insulating material to the first insulating material being greater than 1. Accordingly, undercut of the first and second insulating materials can be prevented. This stabilizes the step coverage of a subsequently formed transparent electrode.

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