Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2007-01-30
2007-01-30
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C257S777000
Reexamination Certificate
active
10824639
ABSTRACT:
The invention relates to a semiconductor device manufacturing method which can provide high reliability in electric connection between an electrode of a semiconductor chip and a substrate. Sealing resin is coated in a region of a substrate where a first electrode is not formed. A semiconductor chip formed with a second electrode on its end portion is prepared and disposed so as to face to a front surface of the substrate. The end portion of the semiconductor chip is pressed from its back surface by shifting a first movable plate downward to press the second electrode into contact with the first electrode. After then, a center portion of the semiconductor chip is pressed from its back surface by shifting a second movable plate downward to fill a space between the substrate and the semiconductor chip with the sealing resin.
REFERENCES:
patent: 6432744 (2002-08-01), Amador et al.
patent: 6674178 (2004-01-01), Ikegami
patent: 2002/0005400 (2002-01-01), Gat
patent: 2002/0158060 (2002-10-01), Uchiyama et al.
patent: 0468874 (1992-01-01), None
patent: 0468874 (1992-01-01), None
patent: 62094925 (1987-05-01), None
patent: 2000-236002 (2000-08-01), None
patent: WO-02-50875 (2002-06-01), None
patent: WO-02-50875 (2002-06-01), None
Tanida Kazumasa
Umemoto Mitsuo
Morrison & Foerster / LLP
Rohm & Co., Ltd.
Sanyo Electric Co,. Ltd.
Vu David
LandOfFree
Semiconductor device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3779076