Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-05-01
2007-05-01
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S003000, C117S013000, C117S020000
Reexamination Certificate
active
10567488
ABSTRACT:
The present invention is a method for producing a wafer comprising, at least, a BMD forming step of subjecting a silicon single crystal in a state of an ingot to heat treatment thereby to form bulk micro defects (BMDs) inside, and a wafer processing step of processing the ingot in which the bulk micro defects (BMDs) was formed into wafers. Thereby, there can be provided a method for producing a wafer, wherein heat treatment for providing IG capability in production of wafer can be shortened and wafers with high IG capability can be produced in large quantity. Also, the present invention can further comprise a wafer heat-treating step of subjecting the processed wafer to heat treatment, or an epitaxial growth step of forming an epitaxial layer on the wafer. Thereby, there is improved productivity of annealed wafers or epitaxial wafers that are excellent in gettering capability.
REFERENCES:
patent: A 60-231365 (1985-11-01), None
patent: A 61-193456 (1986-08-01), None
patent: A 61-193458 (1986-08-01), None
patent: A 6-196430 (1994-07-01), None
patent: A 11-199387 (1999-07-01), None
patent: A 11-322490 (1999-11-01), None
patent: A 2000-211995 (2000-08-01), None
patent: A 2001-53078 (2001-02-01), None
patent: A 2001-77120 (2001-03-01), None
Hiteshew Felisa
Oliff & Berridg,e PLC
Shin-Etsu Handotai & Co., Ltd.
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