Semiconductor device and source voltage control method

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

Other Related Categories

C365S185200, C365S185280, C365S207000

Type

Reexamination Certificate

Status

active

Patent number

11165008

Description

ABSTRACT:
The precharge circuit is provided for precharging, before programming the data, the voltage of the source line ARVSS commonly connected to the memory cells provided in the same sector. The voltage of the source line ARVSS of the memory cell MC is precharged before programming the data, and the voltage of the source line ARVSS of the memory cell MC is not lowered at the time of programming the data, even if the data programming period is shortened. It is thus possible to prevent the leak current during the programming and program the data into the memory cell MC optimally.

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