Method of forming sidewall spacer elements for a circuit...

Details Method of forming sidewall spacer elements for a circuit... Method of forming sidewall spacer elements for a circuit...

2007-03-20

2007-03-20

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S230000, C438S303000

Reexamination Certificate

active

10987466

ABSTRACT:
By heat treating a silicon dioxide liner prior to patterning a silicon nitride spacer layer, the etch selectivity of the silicon dioxide with respect to the silicon nitride is increased, thereby reducing or eliminating the problem of pitting through the silicon dioxide layer. This allows further scaling of the devices, wherein an extremely thin silicon dioxide liner is required to obtain an accurate lateral patterning of the dopant profile in the drain and source regions.

REFERENCES:
patent: 5013675 (1991-05-01), Shen et al.
patent: 5847428 (1998-12-01), Fulford et al.
patent: 6225231 (2001-05-01), Losavio
patent: 6448167 (2002-09-01), Wang et al.
patent: 6498067 (2002-12-01), Perng et al.

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