Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Outside periphery of package having specified shape or...
Reexamination Certificate
2007-05-29
2007-05-29
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Outside periphery of package having specified shape or...
C257S773000, C257S758000, C257S784000, C257S786000, C257S700000, C257S774000, C257S734000, C257S748000, C257S750000, C438S424000, C438S462000
Reexamination Certificate
active
10768796
ABSTRACT:
A method of manufacturing an integrated circuit provides a substrate having a semiconductor device, and includes forming an intermetal dielectric layer over the substrate and the semiconductor device. A metal wire is formed above the semiconductor device and in contact therewith and a passivation layer is formed over the intermetal dielectric layer. A bond pad is formed connected to the metal wire. A protective moat, with sidewall passivation layer, is formed through the passivation layer and the intermetal dielectric layer, and is located between the metal wire and an outside edge of the integrated circuit.
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Bu Xiaomei
Chok Kho Liep
Chong Huey Ming
Foong Yee Mei
Goh Luona
Chartered Semiconductor Manufacturing Ltd.
Crane Sara
Im Jungwa
Ishimaru Mikio
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