Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-07-31
2007-07-31
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S773000, C257S774000, C257S775000, C257SE21577
Reexamination Certificate
active
10939414
ABSTRACT:
A semiconductor device includes first level wires; a low-dielectric constant film on the first level wires; first flat vias embedded in the low-dielectric constant film connected to the first level wires, each via having a first length in a longitudinal direction of the first level wires and a second length in a orthogonal direction to the first direction on a plane where the first level wires are disposed, aspect ratio of at least one of the first and second lengths to a height perpendicular to the plane is over 1; and second level wires disposed on the low-dielectric constant film connected to the first vias.
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Lee Eugene
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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