Single level metal memory cell using chalcogenide cladding

Details Single level metal memory cell using chalcogenide cladding Single level metal memory cell using chalcogenide cladding

2007-01-02

2007-01-02

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S622000, C438S625000, C257SE21209

Reexamination Certificate

active

10838966

ABSTRACT:
An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.

REFERENCES:
patent: 5789758 (1998-08-01), Reinberg

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