Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-04-24
2007-04-24
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S096000, C117S097000, C117S098000, C117S101000, C117S105000, C117S109000, C117S002000, C117S944000
Reexamination Certificate
active
10997014
ABSTRACT:
This invention disclosure describes methods for the fabrication metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).
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Kunemund Robert
Wallenstein Wagner & Rockey Ltd.
Zurbuchen Mark A.
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